THE BASIC PRINCIPLES OF SIC DIODE MANUFACTURERS USA

A schematic check out of this gadget is documented in Figure 6a: as is usually found, the MOS construction is shaped on the bottom and sidewalls of a trench, while the Schottky contact is on the top surface area. Using this format, named trench MOS barrier Schottky rectifier (TMBS), a diminished amount of electrical subject is reached to the Schott